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IRF7828PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7828PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 6 page IRF7828PbF 2 www.irf.com Parameter Min Typ Max Units Conditions Diode Forward V SD – – 1.0 V I S = 10A, VGS = 0V Voltage* Reverse Recovery Q rr – 13 – nC di/dt ~ 700A/µs V DS = 16V, VGS = 0V, IS = 15A Reverse Recovery Q rr(s) – 13 – nC di/dt = 700A/µs Charge (with Parallel (with 10BQ040) Schottky) V DS = 16V, VGS = 0V, IS = 15A Source-Drain Rating & Characteristics Charge Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Typ = measured - Q oss
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at V GS = 5.0V, IF = 10A. Parameter Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage Static Drain-Source R DS (on) – 9.5 12.5 m Ω V GS = 4.5V, ID = 10A on Resistance Gate Threshold Voltage V GS(th) 1.0 – – V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS – – 1.0 V DS = 24V, VGS = 0 Current* – – 150 µA V DS = 24V, VGS = 0, Tj = 125°C Gate-Source Leakage I GSS – – ±100 nA V GS = ±20V Current Total Gate Chg Cont FET Q G – 9.2 14 V GS=5.0V, ID=15A, VDS=16V Total Gate Chg Sync FET Q G – 7.3 – V GS = 5V, VDS< 100mV Pre-Vth Q GS1 – 2.5 – V DS = 15V, ID = 10A Gate-Source Charge Post-Vth Q GS2 – 0.8 – nC Gate-Source Charge Gate to Drain Charge Q GD – 2.9 – Switch Chg(Q gs2 + Qgd) Q sw – 3.7 – Output Charge Q oss – 6.1 – V DS = 10V, VGS = 0 Gate Resistance R G – 2.3 – Ω Turn-on Delay Time t d (on) – 6.3 – V DD = 15V, ID = 10A Rise Time t r – 2.7 – ns V GS = 4.5V Turn-off Delay Time t d (off) – 9.7 – Clamped Inductive Load Fall Time t f – 7.3 – Input Capacitance C iss – 1010 – Output Capacitance C oss – 360 – pF V DS = 15V, VGS = 0 Reverse Transfer Capacitance C rss – 110 – Electrical Characteristics Current |
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