M36W216TI70ZA1T datasheet(1/62 Pages) STMICROELECTRONICS

Part #	M36W216TI70ZA1T

Description	16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRELIMINARY DATA

November 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M36W216TI

M36W216BI

16 Mbit (1Mb x16, Boot Block) Flash Memory

and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product

FEATURES SUMMARY

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MULTIPLE MEMORY PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 2 Mbit (128Kb x 16) SRAM

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SUPPLY VOLTAGE

–VDDF = VDDS = 2.7V to 3.3V

–VDDQF = VDDS = 2.7V to 3.3V

–VPPF = 12V for Fast Program (optional)

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ACCESS TIME: 70ns, 85ns

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LOW POWER CONSUMPTION

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ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh

FLASH MEMORY

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MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

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PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

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BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

–WPF for Block Lock-Down

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AUTOMATIC STAND-BY MODE

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PROGRAM and ERASE SUSPEND

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100,000 PROGRAM/ERASE CYCLES per

BLOCK

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COMMON FLASH INTERFACE

– 64 bit Security Code

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SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

SRAM

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2 Mbit (128K x 16 bit)

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ACCESS TIME: 70ns

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LOW VDDS DATA RETENTION: 1.5V

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POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

Figure 1. Packages

FBGA

Stacked LFBGA66 (ZA)

12 x 8mm

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