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M40Z111WMH6 Datasheet(PDF) 9 Page - STMicroelectronics |
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M40Z111WMH6 Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 15 page 9/15 M40Z111, M40Z111W Table 6. Power Down/Up AC Characteristics Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. 4. tER (min) = 20ms for Industrial Temperature Range - Grade 6 device. VCC Noise And Negative Going Transients ICC transients, including those produced by output switching, can produce voltage fluctuations, re- sulting inspikes onthe VCC bus. These transients can be reduced if capacitors are used to store en- ergy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic by- pass capacitor value of 0.1µF (as shown in Figure 8) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate neg- ative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recom- mends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 8. Supply Voltage Protection Symbol Parameter(1) Min Max Unit tF (2) VPFD (max) to VPFD (min) VCC Fall Time 300 µs tFB (3) VPFD (min) to VSS VCC Fall Time 10 µs tR VPFD (min) to VPFD (max) VCC Rise Time 10 µs tRB VSS to VPFD (min) VCC Rise Time 1µs tEDL Chip Enable Propagation Delay M40Z111 15 ns M40Z111W 20 ns tEDH Chip Enable Propagation Delay M40Z111 10 ns M40Z111W 20 ns tER (4) Chip Enable Recovery 40 200 ms tWPT Write Protect Time M40Z111 40 150 µs M40Z111W 40 250 µs AI00622 VCC 0.1 µF DEVICE VCC VSS |
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