M36WV864B85ZA6T datasheet(1/92 Pages) STMICROELECTRONICS

Part #	M36WV864B85ZA6T

Description	64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRODUCT PREVIEW

July 2002

This is preliminary information on a new product now in development. Details are subject to change without notice.

M36WT864TF

M36WT864BF

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory

and 8 Mbit (512K x16) SRAM, Multiple Memory Product

FEATURES SUMMARY

s

SUPPLY VOLTAGE

–VDDF = 1.65V to 2.2V

–VDDS = VDDQF = 2.7V to 3.3V

–VPPF = 12V for Fast Program (optional)

s

ACCESS TIME: 70, 85, 100ns

s

LOW POWER CONSUMPTION

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ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36WT864TF: 8810h

– Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY

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PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

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MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

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DUAL OPERATIONS

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

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BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

–WP for Block Lock-Down

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SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

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COMMON FLASH INTERFACE (CFI)

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100,000 PROGRAM/ERASE CYCLES per

BLOCK

SRAM

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8 Mbit (512K x 16 bit)

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EQUAL CYCLE and ACCESS TIMES: 70ns

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LOW STANDBY CURRENT

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LOW VDDS DATA RETENTION: 1.5V

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TRI-STATE COMMON I/O

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AUTOMATIC POWER DOWN

Figure 1. Packages

FBGA

Stacked LFBGA96 (ZA)

8 x 14mm

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