M29W800AT, M29W800AB

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Bus Operations

The following operations can be performed using

the appropriate bus cycles: Read (Array, Electron-

ic Signature, Block Protection Status), Write com-

mand, Output Disable, Stan-by, Reset, Block

Protection, Unprotection, Protection Verify, Unpro-

tection Verify and Block Temporary Unprotection.

See Tables 5 and 6.

Command Interface

Instructions, made up of commands written in cy-

cles, can be given to the Program/Erase Controller

through a Command Interface (C.I.). For added

data protection, program or erase execution starts

after 4 or 6 cycles. The first, second, fourth and

fifth cycles are used to input Coded cycles to the

C.I. This Coded sequence is the same for all Pro-

gram/Erase Controller instructions. The ’Com-

mand’ itself and its confirmation, when applicable,

are given on the third, fourth or sixth cycles. Any

incorrect command or any improper command se-

quence will reset the device to Read Array mode.

Instructions

Seven instructions are defined to perform Read

Array, Auto Select (to read the Electronic Signa-

ture or Block Protection Status), Program, Block

Erase, Chip Erase, Erase Suspend and Erase Re-

sume.

The internal P/E.C. automatically handles all tim-

ing and verification of the Program and Erase op-

erations. The Status Register Data Polling,

Toggle, Error bits and the RB output may be read

at any time, during programming or erase, to mon-

itor the progress of the operation.

Instructions are composed of up to six cycles. The

first two cycles input a Coded sequence to the

Command Interface which is common to all in-

structions (see Table 9).

The third cycle inputs the instruction set-up com-

mand. Subsequent cycles output the addressed

data, Electronic Signature or Block Protection Sta-

tus for Read operations. In order to give additional

data protection, the instructions for Program and

Block or Chip Erase require further command in-

puts. For a Program instruction, the fourth com-

mand cycle inputs the address and data to be

programmed. For an Erase instruction (Block or

Chip), the fourth and fifth cycles input a further

Coded sequence before the Erase confirm com-

mand on the sixth cycle. Erasure of a memory

block may be suspended, in order to read data

from another block or to program data in another

block, and then resumed. When power is first ap-

terface is reset to Read Array.

Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.

3. Depends on range.

Symbol

Parameter

Value

Unit

–40 to 85

°C

Temperature Under Bias

–50 to 125

°C

Storage Temperature

–65 to 150

°C

(2)

Input or Output Voltage

–0.6 to 5

V

Supply Voltage

–0.6 to 5

V

(2)

A9, E, G, RP Voltage

–0.6 to 13.5

V