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IRF6678PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF6678PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 06/15/06 IRF6678PbF IRF6678TRPbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical On-Resistance vs. Gate Voltage SQ SX ST MQ MX MT 0 102030405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 24V VDS= 15V ID= 23A VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7m Ω@ 10V 2.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.8V 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 29A TJ = 25°C TJ = 125°C PD - 97223 l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Description The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert- ers that power high current loads such as the latest generation of microprocessors. The IRF6678PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets. DirectFET ISOMETRIC MX Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A Max. 24 150 240 ±20 30 30 210 24 Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 23A. Notes: |
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