SI4420BDY datasheet(3/6 Pages) VISHAY

Part #	SI4420BDY

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 6 page

Document Number: 73067

S-61013-Rev. B, 12-Jun-06

www.vishay.com

3

Vishay Siliconix

Si4420BDY

TYPICAL CHARACTERISTICS

25 °C unless noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.004

0.008

0.012

0.016

0.020

0

10203040

50

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

0

2

4

6

8

10

0

5

10

15

20

25

30

VDS = 15 V

ID = 13.5 A

Qg - Total Gate Charge (nC)

1.0

1.2

1

10

50

0.00

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

500

1000

1500

2000

2500

3000

0

5

10

15

20

25

30

Crss

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 13.5 A

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0

2468

10

ID = 13.5 A

VGS - Gate-to-Source Voltage (V)

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