Thermosensors
TS105-1 / TS105-2
Sensors in thin film technology
HL-Planartechnik GmbH
Hauert 13 44 227 Dortmund Tel.: ++49 / (0)231 / 97400 Fax.: ++49 / (0)231 / 974020
105_12_e_01
March 1999
THERMOPILES are used for non-contact surface temperature measuring.
Any object emits infrared radiation. The radiation power is increasing with growing surface temperatures.
Based on this relation, THERMOPILES measure the emitted power and determine the object’s temperature
precisely.
Function Principle
THERMOPILES are based on the Seebeck effect, which is used since a long time for conventional
thermocouples. The application of micromechanics and thin film technology allows the production of
miniaturized and cost effective sensor elements.
A multitude of thermojunctions deposited on a silicon substrate is connected in series to form a
THERMOPILE. The hot junctions are thermally insulated from the cold junctions on the substrate by etching a
self-supporting extremly thin membrane. An absorbing layer on the hot junctions transforms the incoming
radiation into heat. A voltage proportional to the radiation is generated by the thermoelectric effect. The
sensors are delivered in TO5-packages. Different housings and filter types can be selected to find an optimal
solution for each application. Chips without housing are available as well.
Technical Data
Filter
Parameter
Symbol
Unit
Value
Condition
Number of thermojunctions
n
100
Material
BiSb, NiCr
Active Area
AA
mm²
0.7 * 0,7
Chip Size
AC
mm²
2.0 * 2.0
Resistance of Thermopiles
R
k
Ω
50
± 15
25 °C
TC of resistance
TCR
% / K
-0.03
± 0.02
+25...+75 °C
Sensitivity of sensor
SC
V / W
typical 110
25°C, 500 K, DC
TC of sensitivity
TCS
% / K
-0.52
± 0.08
+25...+75 °C
Specific detectivity
D*
cm*Hz
1/2 / W
2.1 * 10
8
500 K, DC
Noise equivalent power
NEP
nW
0.35
500 K, 1 Hz
Noise voltage
UN
nV / Hz
1/2
37
500 K, 1 Hz
Time constant
t63
ms
40
± 10
500 K, 1 Hz
Storage temperature
T
°C
-40 ... 100
Reference Resistor
Resistance
RNi
Ω
1000
± 0.4%
0 °C
TC of resistance
TCRNi
ppm / K
6178
± 1%
0 °C...100 °C
Function: R(T) = 1000
Ω + 6,17*T*Ω, for detailled information see data sheet of reference resistor
0
10
20
30
40
50
60
70
80
90
100
45
6
789
10 11 12 13 14
Wavelength(um)
Operation temperature
T
°C
-20 ... 100
absorption area
(hot junctions)
SiNx-membrane
silicon substrate
(cold junctions)
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