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MBR2X80-40 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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MBR2X80-40 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
2 / 2 page MBR2*80 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers 0.0 0.2 0.4 0.6 0.8 1 10 100 0 10 20 30 40 50 0.1 1 10 100 1000 10000 0 20 40 60 80 0 10 20 30 40 50 60 70 80 0.001 0.01 0.1 1 10 0.1 1 0 40 80 120 160 0 20 40 60 80 100 120 I F(AV) T C °C I F(AV) t s K/W 0 10 20 30 40 100 1000 10000 C T I R I F A V F V R V R V pF V mA A P (AV) W Z thJC V Single Pulse 0.05 DSS2x81-0045B A T VJ=150°C 125°C 100°C 75°C 25°C T VJ = 150°C 125°C 25°C T VJ= 25°C d=0.5 d = DC 0.5 0.33 0.25 0.17 0.08 0.08 D=0.5 0.25 0.17 DC 50°C 0.33 Fig. 3 Typ. junction capacitance C T versus reverse voltage V R Fig. 2 Typ. value of reverse current I R versus reverse voltage V R Fig. 1 Maximum forward voltage drop characteristics Fig. 4 Average forward current I F(AV) versus case temperature T C Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode |
Similar Part No. - MBR2X80-40 |
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Similar Description - MBR2X80-40 |
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