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M58MR016CZC Datasheet(PDF) 11 Page - STMicroelectronics |
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M58MR016CZC Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 51 page 11/51 M58MR016C, M58MR016D Table 10. Commands Hex Code Command 00h Invalid Reset 01h Protect Confirm 03h Write Read Configuration Register Confirm 10h Alternative Program Set-up 20h Block Erase Set-up 2Fh Lock Confirm 30h Double Word Program Set-up 40h Program Set-up 50h Clear Status Register 55h Tetra Word Program Set-up 60h Protect Set-up and Write Read Configuration Register 70h Read Status Register 80h Bank Erase Set-up 90h Read Electronic Signature 98h CFI Query B0h Program/Erase Suspend C0h Protection Program and Lock Protection Program D0h Program/Erase Resume, Erase Confirm or Unprotect Confirm FFh Read Array INSTRUCTIONS AND COMMANDS Eighteen instructions are available (see Tables 10 and 11) to perform Read Memory Array, Read Sta- tus Register, Read Electronic Signature, CFI Que- ry, Block Erase, Bank Erase, Program, Tetra Word Program, Double Word Program, Clear Status Register, Program/Erase Suspend, Program/ Erase Resume, Block Protect, Block Unprotect, Block Lock, Protection Register Program, Read Configuration Register and Lock Protection Pro- gram. Status Register output may be read at any time, during programming or erase, to monitor the progress of the operation. An internal Command Interface (C.I.) decodes the instructions while an internal Program/Erase Con- troller (P/E.C.) handles all timing and verifies the correct execution of the Program and Erase in- structions. P/E.C. provides a Status Register whose bits indicate operation and exit status of the internal algorithms. The Command Interface is re- set to Read Array when power is first applied, when exiting from Reset or whenever VDD is lower than VLKO. Command sequence must be followed exactly. Any invalid combination of commands will reset the device to Read Array. Read (RD) The Read instruction consists of one write cycle (refer to Device Operations section) and places the addressed bank in Read Array mode. When a device reset occurs, the memory is in Read Array as default. A read array command will be ignored while a bank is programming or erasing. However in the other bank a read array command will be ac- cepted. Read Status Register (RSR) A bank’s Status Register indicates when a pro- gram or erase operation is complete and the suc- cess or failure of operation itself. Issue a Read Status Register Instruction (70h) to read the Sta- tus Register content of the addressed bank. The status of the other bank is not affected by the com- mand. The Read Status Register instruction may be issued at any time, also when a Program/Erase operation is ongoing. The following Read opera- tions output the content of the Status Register of the addressed bank. The Status Register is latched on the falling edge of E or G signals, and can be read until E or G returns to VIH. Either E or G must be toggled to update the latched data. Read Electronic Signature (RSIG) The Read Electronic Signature instruction con- sists of one write cycle (refer to Device Operations section) giving the command 90h to an address within the bank A. A subsequent read in the ad- dress of bank A will output the Manufacturer Code, the Device Code, the protection Status of Blocks of bank A, the Die Revision Code, the Protection Register, or the Read Configuration Register (see Table 9). If the first write cycle of Read Electronic Signature instruction is issued to an address within the bank B, a subsequent read in an address of bank B will output the protection Status of Blocks of bank B. The status of the other bank is not affected by the command (see Table 8). See Tables 5, 6, 7 and 8 for the valid address. The Electronic Signature can be read from the memory allowing programming equipment or applications to automatically match their interface to the char- acteristics of M58MR016C and M58MR016D. |
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