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MBR10150 Datasheet(PDF) 1 Page - Sirectifier Semiconductors

Part # MBR10150
Description  Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
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Manufacturer  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

MBR10150 Datasheet(HTML) 1 Page - Sirectifier Semiconductors

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MBR10150 thru MBR10200
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min.
Max.
12.70
14.73
14.23
16.51
9.66
10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Inches
Min.
Max.
0.500
0.580
0.560
0.650
0.380
0.420
0.139
0.161
2.300
0.420
0.100
0.135
0.045
0.070
-
0.250
0.025
0.035
0.190
0.210
0.140
0.190
0.015
0.022
0.080
0.115
0.025
0.055
Dimensions TO-220AC
C
A
MBR10150
MBR10200
VRRM
V
150
200
VRMS
V
105
140
VDC
V
150
200
A=Anode, C=Cathode, TAB=Cathode
C(TAB)
C
A
Symbol
Test Conditions
Maximum Ratings
Unit
IFAV
TC=125
oC; rectangular, d=0.5
10
A
IFSM
TVJ=45
oC; tp=10ms (50Hz), sine
VA=1.5.VRRM typ.; f=10kHz; repetitive
150
0.8
A
IAR
A
TVJ
TVJM
Tstg
-65...+150
150
-65...+175
oC
10000
(dv/dt)cr
V/us
Md
mounting torque
typical
0.4...0.6
2
Nm
Weight
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
TVJ=25
oC; VR=VRRM
TVJ=125
oC; VR=VRRM
1.0
50
mA
IR
RthJC
2.0
K/W
IF=10A; TVJ=125
oC
IF=10A; TVJ=25
oC
IF=20A; TVJ=125
oC
0.80
0.90
0.90
1.00
V
VF
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Free wheeling diode in low voltage
converters
FEATURES
* International standard package
* Very low VF
* Extremely low switching losses
* Low IRM-values
IF=20A; TVJ=25
oC


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