M58WR128EB80ZB6T datasheet(1/87 Pages) STMICROELECTRONICS

Part #	M58WR128EB80ZB6T

Description	128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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PRODUCT PREVIEW

May 2003

This is preliminary information on a new product now in development. Details are subject to change without notice.

M58WR128ET

M58WR128EB

128 Mbit (8Mb x 16, Multiple Bank, Burst)

1.8V Supply Flash Memory

FEATURES SUMMARY

s

SUPPLY VOLTAGE

–VDD = 1.65V to 2.2V for Program, Erase and

Read

–VDDQ = 1.65V to 3.3V for I/O Buffers

–VPP = 12V for fast Program (optional)

s

SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70, 80, 100ns

s

SYNCHRONOUS BURST READ SUSPEND

s

PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

s

MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

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DUAL OPERATIONS

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

s

BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

–WP for Block Lock-Down

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SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

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COMMON FLASH INTERFACE (CFI)

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Package

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ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58WR128ET: 881Eh

– Bottom Device Code, M58WR128EB: 881Fh

VFBGA60 (ZB)

12.5 x 12mm

FBGA

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