www.ti.com

THERMAL CHARACTERISTICS

(1)

PARAMETER MEASUREMENT INFORMATION

50pF

27 Ω

27 Ω

0Vor3V

A

B

D

SN65HVD1176

SN75HVD1176

SLLS563D – JULY 2003 – REVISED DECEMBER 2007

Table 1. SUPPLY CURRENT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

4

6

mA

3.8

6

mA

Supply

Receiver only, RE at 0 V, DE at 0 V, All other inputs open, no load

3.6

6

mA

0.2

5

µA

(1)

Over recommended operating conditions

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

208.3

°C/W

θ

JA

128.7

°C/W

θ

JB

Junction-to-board thermal resistance

High-K board

77.6

°C/W

θ

JC

Junction-to-case thermal resistance

43.9

°C/W

Device power dissipation

15 MHz, 50% duty cycle square wave

277

318

mW

input, driver and receiver enabled

SN65HVD1176

–40

64

°C

Low-K board, no air flow,

SN75HVD1176

0

°C

Ambient air temperature

SN65HVD1176

–40

89

°C

High-K board, no air flow,

SN75HVD1176

0

°C

Thermal shut down junction temperature

150

°C

(1)

See Application Information section for an explanation of these parameters.

(2)

(3)

The intent of

θ

This methodology is not meant to and will not predict the performance of a package in an application-specific environment.

(4)

JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.

(5)

JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages.

NOTE:

Test load capacitance includes probe and jig capacitance (unless otherwise

specified).

Signal generator characteristics: rise and fall time < 6 ns, pulse rate 100 kHz, 50%

Copyright © 2003–2007, Texas Instruments Incorporated

Submit Documentation Feedback

5

Product Folder Link(s): SN65HVD1176 SN75HVD1176