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M59MR032DGC Datasheet(PDF) 4 Page - STMicroelectronics |
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M59MR032DGC Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 49 page M59MR032C, M59MR032D 4/49 Table 1. Signal Names A16-A20 Address Inputs ADQ0-ADQ15 Data Input/Outputs or Address Inputs, Command Inputs E Chip Enable G Output Enable W Write Enable RP Reset/Power-down WP Write Protect K Burst Clock L Latch Enable WAIT Wait Data in Burst Mode BINV Bus Invert VDD Supply Voltage VDDQ Supply Voltage for Input/Output Buffers VPP Optional Supply Voltage for Fast Program & Erase VSS Ground DU Don’t Use as Internally Connected DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by- Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated inter- nally. The device supports synchronous burst read and asynchronous page mode read from all the blocks of the memory array; at power-up the de- vice is configured for page mode read. In synchro- nous burst mode, a new data is output at each clock cycle for frequencies up to 54MHz. The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against pro- gramming and erase at Power-up. Blocks can be unprotected to make changes in the application and then reprotected. Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Re- sume, Block Protect, Block Unprotect, Block Lock- ing, CFI Query, are written to the memory through a Command Interface (C.I.) using standard micro- processor write timings. The memory is offered in LFBGA54 and µBGA46, 0.5 mm ball pitch packages and it is supplied with all the bits erased (set to ’1’). Table 2. Absolute Maximum Ratings (1) Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Depends on range. 3. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. Symbol Parameter Value Unit TA Ambient Operating Temperature (2) –40 to 85 °C TBIAS Temperature Under Bias –40 to 125 °C TSTG Storage Temperature –55 to 155 °C VIO (3) Input or Output Voltage –0.5 to VDDQ+0.5 V VDD, VDDQ Supply Voltage –0.5 to 2.7 V VPP Program Voltage –0.5 to 13 V |
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