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S1PHB36 Datasheet(PDF) 2 Page - Sirectifier Semiconductors

Part # S1PHB36
Description  Single Phase Half Controlled Bridge With Free Wheeling Diode
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Manufacturer  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

S1PHB36 Datasheet(HTML) 2 Page - Sirectifier Semiconductors

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S1PHB36
Symbol
Test Conditions
Characteristic Values
Unit
V
VT, VF
IT, IF=45A; TVJ=25
oC
1.45
VTO
For power-loss calculations only (TVJ=125
oC)
0.85
V
rT
13
m
VD=6V;
TVJ=25
oC
TVJ=-40
oC
VGT
1.0
1.2
V
VD=6V;
TVJ=25
oC
TVJ=-40
oC
TVJ=125
oC
IGT
65
80
50
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.2
V
IGD
5
mA
IH
TVJ=25
oC; VD=6V; RGK=
100
mA
tG=30us; IG=0.3A;
TVJ=25
oC
diG/dt=0.3A/us
TVJ=-40
oC
TVJ=125
oC
150
200
100
mA
IL
per thyristor(diode); DC current
per module
RthJC
1.15
0.29
K/W
per thyristor(diode); DC current
per module
RthJK
1.55
0.39
K/W
dS
Creeping distance on surface
12.6
mm
dA
Creepage distance in air
6.3
mm
a
Maximum allowable acceleration
50
m/s
2
IR, ID
TVJ=TVJM; VR=VRRM; VD=VDRM
TVJ=25
oC
5
0.3
mA
TVJ=25
oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
tgd
2
us
TVJ=125
oC; IT=15A; tp=300us; VR=100V
typ.
tq
150
us
uC
Qr
VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us
75
TVJ=TVJM;
VD=2/3VDRM
A
F ig. 1 G ate trigger range
F ig. 2 G ate controlled delay time t
gd
1
10
100
1000
0.1
1
10
I
G
V
G
mA
1: I
G T, T VJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: P
GAV = 0.5 W
5: P GM = 1 W
6: P GM = 10 W
I
G D, T VJ = 125°C
4
2
1
5
6
10
100
1000
1
10
100
1000
s
t
gd
T
VJ = 25° C
typ.
Limit
mA
I
G
3
Single Phase Half Controlled Bridge With Free Wheeling Diode


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