M59DR032C120ZB6T datasheet(11/38 Pages) STMICROELECTRONICS

Part #	M59DR032C120ZB6T

Description	32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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M59DR032A, M59DR032B

Bank Erase (BKE) Instruction. This instruction

uses six write cycles and is used to erase all the

blocks belonging to the selected bank. The Erase

Set-up command 80h is written to address 555h

on the third cycle after the two Coded cycles. The

Bank Erase Confirm command 10h is similarly

written on the sixth cycle after another two Coded

cycles at an address within the selected bank. If

the second command given is not an erase con-

firm or if the Coded cycles are wrong, the instruc-

tion aborts and the device is reset to Read Array.

It is not necessary to program the array with 00h

first as the P/E.C. will automatically do this before

erasing it to FFh. Read operations within the same

bank after the sixth rising edge of W or E output

the Status Register bits. During the execution of

the erase by the P/E.C., Data Polling bit DQ7 re-

turns ’0’, then ’1’ on completion. The Toggle bit

DQ6 toggles during erase operation and stops

when erase is completed. After completion the

Status Register bit DQ5 returns ’1’ if there has

been an Erase Failure.

Erase Suspend (ES) Instruction. In a dual bank

memory the Erase Suspend instruction is used to

read data within the bank where erase is in

progress. It is also possible to program data in

blocks not being erased.

The Erase Suspend instruction consists of writing

the command B0h without any specific address.

No Coded Cycles are required. Erase suspend is

accepted only during the Block Erase instruction

execution. The Toggle bit DQ6 stops toggling

when the P/E.C. is suspended within 15µs after

the Erase Suspend (ES) command has been writ-

ten. The device will then automatically be set to

Read Memory Array mode. When erase is sus-

pended, a Read from blocks being erased will out-

put DQ2 toggling and DQ6 at '1'. A Read from a

block not being erased returns valid data. During

suspension the memory will respond only to the

Erase Resume ER and the Program PG instruc-

tions. A Program operation can be initiated during

erase suspend in one of the blocks not being

erased. It will result in DQ6 toggling when the data

is being programmed.

Erase Resume (ER) Instruction. If

an

Erase

Suspend instruction was previously executed, the

erase operation may be resumed by giving the

command 30h, at an address within the bank be-

ing erased and without any Coded Cycle.

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