MB85R2001 datasheet(6/16 Pages) FUJITSU

Part #	MB85R2001

Description	Memory FRAM CMOS 2 M Bit (256 K 횞 8)

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Manufacturer	FUJITSU [Fujitsu Component Limited.]

Direct Link	http://edevice.fujitsu.com/fmd/en/index.html

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MB85R2001

6

■ ELECTRICAL CHARACTERISTICS

1.

DC CHARACTERISTICS

(within recommended operating conditions)

*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.

IOUT : output current

*2 : All pins other than setting pins should be input at the CMOS level voltages such as H

≥ VCC − 0.2 V, L ≤ 0.2 V.

Parameter

Symbol

Test Condition

Value

Unit

Min

Typ

Max

Input Leakage Current

|ILI|

VIN = 0 V to VCC

⎯⎯

10

µA

Output Leakage Current

|ILO|

VOUT

= 0 V to VCC,

CE1

= VIH or OE = VIH

⎯⎯

10

µA

Supply Current

ICC

CE1

= 0.2 V, CE2 = VCC − 0.2 V,

IOUT

= 0 mA*1

⎯

10

15

mA

Standby Current

ISB

CE1

≥ VCC − 0.2 V

⎯

10

50

µA

CE2

≤ 0.2 V*2

OE

≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*2

Output Voltage (high)

VOH

IOH

= − 2.0 mA

VCC x 0.8

⎯⎯

V

Output Voltage (low)

VOL

IOL

= 2.0 mA

⎯⎯

0.4

V

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