SI4114DY datasheet(3/7 Pages) VISHAY

Part #	SI4114DY

Description	N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68394

S-81012-Rev. A, 05-May-08

www.vishay.com

3

Vishay Siliconix

Si4114DY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 3 V

VGS =2 V

0.0040

0.0046

0.0052

0.0058

0.0064

0.0070

0

1020304050

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

0

13263952

65

ID =10A

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =10 V

VDS =5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.6

1.2

1.8

2.4

3.0

0.0

0.8

1.6

2.4

3.2

4.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

900

1800

2700

3600

4500

04

8

12

16

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =4.5 V

ID =10A

VGS =10 V

1.7

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