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TCDT1110G Datasheet(PDF) 1 Page - Vishay Siliconix |
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TCDT1110G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 83531 For technical questions, contact: optocouplers.answers@vishay.com www.vishay.com Rev. 1.8, 16-May-08 783 Optocoupler, Phototransistor Output TCDT1110/TCDT1110G Vishay Semiconductors DESCRIPTION The TCDT1110/TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. The elements provide a fixed distance between input and output for highest safety requirements. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V RMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated electronic and related household apparatus FEATURES • Extra low coupling capacity - typical 0.2 pF • High Common Mode Rejection • Low temperature coefficient of CTR • Base not connected • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Switch-mode power supplies • Line receiver • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - For appl. class I - IV at mains voltage ≤ 300 V - For appl. class I - III at mains voltage ≤ 600 V according DIN EN 60747-5-5. AGENCY APPROVALS • UL1577, File No. E76222 System Code A, Double Protection • BSI IEC 60950; IEC 60065 • DIN EN 60747-5-5 pending •FIMKO Note G = Leadform 10.16 mm; G is not marked on the body. 17201_1 65 4 2 3 1 NC C E A(+) C (–) NC V DE e3 ORDER INFORMATION PART REMARKS TCDT1110 CTR > 100 %, DIP-6 TCDT1110G CTR > 100 %, DIP-6 ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp/T ≤ 10 µs IFSM 3A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C |
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