KM416S1120D datasheet(11/43 Pages) SAMSUNG

Part #	KM416S1120D

Description	512K x 16bit x 2 Banks Synchronous DRAM LVTTL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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11 / 43 page

KM416S1120D

CMOS SDRAM

- 11

Rev. 1.4 (Jun. 1999)

BURST SEQUENCE (BURST LENGTH = 4)

Initial Address

Sequential

Interleave

A1

A0

0

1

0

1

0

1

0

1

2

3

1

2

3

0

2

3

0

1

3

0

1

2

0

1

2

3

1

0

3

2

3

0

1

3

2

1

0

BURST SEQUENCE (BURST LENGTH = 8)

Initial Address

Sequential

Interleave

0

1

0

1

0

1

0

1

0

1

0

1

2

3

4

5

6

7

2

3

4

5

6

7

0

1

4

5

6

7

0

1

2

3

6

7

0

1

2

3

4

5

A1

A0

A2

0

1

0

1

2

3

4

5

6

7

0

3

4

5

6

7

0

1

2

5

6

7

0

1

2

3

4

7

0

1

2

3

4

5

6

0

1

2

3

4

5

6

7

2

3

0

1

6

7

4

5

4

5

6

7

0

1

2

3

6

7

4

5

2

3

0

1

0

3

2

5

4

7

6

3

2

1

0

7

6

5

4

5

4

7

6

1

0

3

2

7

6

5

4

3

2

1

0

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KM416S1120D Datasheet(PDF) 11 Page - Samsung semiconductor

KM416S1120D Datasheet(HTML) 11 Page - Samsung semiconductor

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