STP3NK80Z datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STP3NK80Z

Description	N-channel 800V - 3.8廓 - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1

Electrical ratings

3/18

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 / DPAK

IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

800

V

VDGR

Drain-gate voltage (RGS = 20KΩ)800

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

2.5

2.5 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC=100°C

1.57

1.57 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

10

10 (1)

A

PTOT

Total dissipation at TC = 25°C

70

25

W

Derating factor

0.56

0.2

W/°C

VESD(G-S)

Gate source ESD

(HBM-C=100pF, R=1.5

ΚΩ)

2V

dv/dt (3)

3.

ISD ≤2.5A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

-

2500

V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

DPAK

IPAK

Rthj-case Thermal resistance junction-case max

1.78

5

1.78

°C/W

Rthj-a

Thermal resistance junction-ambient

max

62.5

100

°C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

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