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STP8NK80Z Datasheet(PDF) 4 Page - STMicroelectronics |
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STP8NK80Z Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 15 page  Electrical characteristics STP8NK80Z - STP8NK80ZFP - STW8NK80Z 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown voltage ID =1mA, VGS = 0 800 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125°C 1 50 µA µA IGSS Gate-body leakage Current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 33.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.1 A 1.3 1.5 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15v, ID = 3.1 A 5.2 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1320 143 27 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance VDS =0V, VDS = 0V to 640V 58 pF td(on) tr tr(off) tr Turn-on delay time Rise time Turn-off delay time Fall time VDD = 400 V, ID = 3.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) 17 30 48 28 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 640 V, ID = 6.2 A, VGS = 10 V 46 8.5 25 nC nC nC tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD = 640 V, ID = 6.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 23) 9 9 18 ns ns ns |
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