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STD95NH02L Datasheet(PDF) 5 Page - STMicroelectronics

Part # STD95NH02L
Description  N-channel 24V - 0.0039廓 - 80A - DPAK - IPAK Ultra low gate charge STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD95NH02L Datasheet(HTML) 5 Page - STMicroelectronics

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STD95NH02L - STD95NH02L-1
Electrical characteristics
5/16
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
80
320
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 40A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs,
VDD = 20V, Tj = 150°C
(see Figure 16)
42
50.4
2.4
ns
nC
A


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