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SMTPA180 Datasheet(PDF) 2 Page - STMicroelectronics

Part # SMTPA180
Description  TRISILETM
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SMTPA180 Datasheet(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to leads.
20
°C/W
Rth (j-a)
Junction to ambient on printed circuit
with standard footprint dimensions.
100
°C/W
THERMAL RESISTANCES
Type
Marking
IRM @VRM
IR @VR
VBO @IBO
IH
C
max.
max.
note 1
max.
note2
max.
min.
note3
max.
note4
Laser
µAV
µAV
V
mA
mA
pF
SMTPA62
SMTPA68
SMTPA100
SMTPA120
SMTPA130
SMTPA180
SMTPA200
SMTPA220
SMTPA240
SMTPA270
U01
U05
U13
U17
U19
U25
U27
U31
U35
U39
2
2
2
2
2
2
2
2
2
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
68
100
120
130
180
200
220
240
270
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
150
100
100
100
100
100
100
100
100
All parameters tested at 25
°C, except where indicated.
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS (Tamb =25
°C)
Note 1:
IR measured at VR guarantee VBRmin
≥ VR
Note 2:
Measured at 50 Hz (1 cycle) - See test circuit 1.
Note 3:
See test circuit 2.
Note 4:
VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR.
Symbol
Parameter
Value
Unit
P
Power dissipation
Tlead =50
°C5
W
IPP
Peak pulse current
10/1000
µs
8/20
µs
50
100
A
ITSM
Non repetitive surge peak on-state
current
tp = 20 ms
30
A
dV/dt
Critical rate of rise of off-state voltage
VRM
5KV/
µs
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb
= 25°C)
SMTPA xxx
2/5


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