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LM4926 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM4926 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 22 page Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 4.5V Storage Temperature −65˚C to +150˚C Input Voltage -0.3V to V DD + 0.3V Power Dissipation (Note 3) Internally Limited ESD Susceptibility (Note 4) 2000V ESD Susceptibility (Note 5) 200V Junction Temperature 150˚C Thermal Resistance θ JA (typ) TLE1411A (Note 11) 86˚C/W Operating Ratings Temperature Range T MIN ≤ T A ≤ T MAX −40˚C ≤ T A ≤ 85˚C Supply Voltage (V DD) 1.6V ≤ V DD ≤ 4.2V Electrical Characteristics V DD =3V (Note 1) The following specifications apply for V DD = 3V and 16 Ω load unless otherwise specified. Limits apply to T A = 25˚C. Symbol Parameter Conditions LM4926 Units (Limits) Typ (Note 6) Limit (Notes 7, 8) I DD Quiescent Power Supply Current Auto Standby Mode V IN = 0V, inputs terminated both channels enabled 2.3 mA Quiescent Power Supply Current Full Power Mode V IN = 0V, inputs terminated both channels enabled 7 10 mA (max) V IN = 0V, inputs terminated one channel enabled 5mA I SD Shutdown Current V SD_LC =VSD_RC = GND 0.1 1.8 µA (max) V OS Output Offset Voltage R L =32 Ω,V IN = 0V 0.7 5 mV (max) A V Voltage Gain –1.5 V/V ∆A V Gain Match 1 % R IN Input Resistance 20 15 25 k Ω (min) k Ω (max) P O Output Power THD+N = 1% (max); f = 1kHz, R L =16 Ω, one channel 80 mW THD+N = 1% (max); f = 1kHz, R L =32 Ω, one channel 65 mW THD+N = 1% (max); f = 1kHz, R L =16 Ω, (two channels in phase) 43 38 mW (min) THD+N = 1% (max); f = 1kHz, R L =32 Ω, (two channels in phase) 50 45 mW (min) THD+N Total Harmonic Distortion + Noise P O = 60mW, f = 1kHz, RL =16 Ω single channel 0.04 % P O = 50mW, f = 1kHz, RL =32 Ω single channel 0.03 PSRR Power Supply Rejection Ratio Full Power Mode V RIPPLE = 200mVp-p, Input Referred f = 217Hz 70 dB f = 1kHz 65 f = 20kHz 50 SNR Signal-to-Noise Ratio R L =32 Ω,P OUT = 20mW, (A-weighted) f = 1kHz, BW = 20Hz to 22kHz 100 dB V IH Shutdown Input Voltage High V IH = 0.7*CPV DD V V IL Shutdown Input Voltage Low V IL = 0.3*CPV DD V T WU Wake Up Time From Shutdown 5 µs www.national.com 4 |
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