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K6T2008U2A-YF70 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K6T2008U2A-YF70 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 10 page CMOS SRAM K6T2008V2A, K6T2008U2A Family Revision 2.01 October 2001 RECOMMENDED DC OPERATING CONDITIONS1) Note: 1. Commercial Product: TA=0 to 70 °C, otherwise specified Industrial Produc t: TA=-40 to 85 °C, otherwise specified 2. Overshoot: Vcc+2.0V in case of pulse width ≤30ns 3. Undershoot: -2.0V in case of pulse width ≤30ns 4. Overshoot and undershoot are sampled, not 100% tested. Item Symbol Product Min Typ Max Unit Supply voltage Vcc K6T2008V2A Family K6T2008U2A Family 3.0 2.7 3.3 3.0 3.6 3.3 V Ground Vss All Family 0 0 0 V Input high voltage VIH K6T2008V2A, K6T2008U2A Family 2.2 - Vcc+0.3 V Input low voltage VIL K6T2008V2A, K6T2008U2A Family -0.33) - 0.6 V CAPACITANCE1) (f=1MHz, TA=25 °C) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Output capacitance CIO VIO=0V - 10 pF DC AND OPERATING CHARACTERISTICS 1. K6T2008V2A Family = 35mA 2. Industrial product = 15 µA Item Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=Vss to Vcc -1 - 1 µA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc -1 - 1 µA Operating power supply current ICC IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - - 5 mA Average operating current ICC1 Cycle time=1 µs, 100%duty, IIO=0mA, CS1≤0.2V, CS2≥Vcc-0.2V, VIN≤0.2V or VIN ≥VCC-0.2V - - 4 mA ICC2 Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL - 25 301) mA Output low voltage VOL IOL=2.1mA - - 0.4 V Output high voltage VOH IOH=-1.0mA 2.4 - - V Standby Current(TTL) ISB CS1=VIH, CS2=VIL, Other inputs = VIH or VIL - - 0.3 mA Standby Current(CMOS) ISB1 CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V or CS2≤0.2V, Other inputs=0~Vcc - 0.2 102) µA |
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