FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• High gain
• High Speed
SYMBOL
PARAMETER
MIN
MAX
UNITS
M
Gain
250
TSTG
Storage Temperature
-55
+70
°C
TO
Operating Temperature
-55
+40
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
280
600
nA
CJ
Junction Capacitance
f = 1 MHz
130
pF
IN
Noise Current Spectral Density f = 100 kHz
2.5
5.5
pA/
√Hz
lrange
Spectral Application Range
Spot Scan
350
1050
nm
R
Responsivity
l= 350 nm, VR = 0 V
38
A/W
Vop
Operating voltage
1700
2000
V
TVBR
Temp. Coeff. Breakdown voltage
Constant Gain = 200
2
V
tr
Response Time*
RL = 50
Ω, l= 675nm
15
22
nS
SPECTRAL RESPONSE M = 200
0
20
40
60
80
100
Wavelength (nm)
0
20
40
60
80
100
Non-Cooled Large Area UV Silicon Avalanche Photodiode
SD 630-70-73-500
PACKAGE DIMENSIONS INCHES
SHV PACKAGE
The SD 630-70-73-500 is a non-cooled large area UV
enhanced silicon avalanche photodiode (APD) with
high gain and low noise in a SHV package.
• Instrumentation
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain of 200 UNLESS OTHERWISE NOTED
*Response time of 10% to 90% is specified at 675nm wavelength light.
Each part is supplied with gain bias voltages and dark current data.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
QE
R
Connector center pin cathode
Connector outer jacket anode
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