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EM7161FV8AW12LF Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM7161FV8AW12LF Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 11 page EM640FU16E Series Low Power, 256Kx16 SRAM 4 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DC AND OPERATING CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=V SS to VCC -1 - 1 µA Output leakage current ILO CS1=V IH or CS2=VIL or OE=VIH or WE=VIL or LB= UB=V IH VIO=V SS to VCC -1 - 1 µA Operating power supply ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=V IH or VIL - - 2 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, I IO=0mA, CS1<0.2V, LB <0.2V or/and UB<0.2V, CS 2>VCC-0.2V, VIN<0.2V or VIN>VCC -0.2V - - 2 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=V IL or/and UB =VIL , VIN=VIL or V IH 55ns - - 25 mA 70ns - - 20 Output low voltage VOL IOL = 2.1mA - - 0.4 V Output high voltage VOH IOH = -1.0mA 2.2 - - V Standby Current (TTL) ISB CS1=VIH, CS2=VIL, Other inputs=V IH or VIL - - 0.3 mA Standby Current (CMOS) ISB1 CS1>VCC-0.2V, CS 2> VCC-0.2V (CS 1 controlled) or 0V <CS 2<0.2V (CS2 controlled), Other inputs = 0~V CC (Typ. condition : VCC=3.0V @ 25 oC) (Max. condition : VCC =3.3V @ 85 oC) LL LF - 1 5 µA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +2.0 V in case of pulse width < 20ns 3. Undershoot: -2.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.3 V Ground VSS 0 0 0 V Input high voltage VIH 2.2 - VCC + 0.2 2) V Input low voltage V IL -0.23) - 0.6 V CAPACITANCE1) (f =1MHz, TA=25 oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance C IN V IN=0V - 8 pF Input/Ouput capacitance C IO V IO =0V - 10 pF |
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