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SFD30N06 Datasheet(PDF) 3 Page - SemiWell Semiconductor |
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SFD30N06 Datasheet(HTML) 3 Page - SemiWell Semiconductor |
3 / 7 page 0.40.6 0.81.0 1.21.4 1.6 10 0 10 1 150℃ Notes : ※ 1. V GS = 0V 2. 250µ s Pulse Test 25℃ V SD[V], Source-Drain voltage 2 468 10 10 0 10 1 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 25V 2. 250µ s Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Notes : ※ 1. 250µ s Pulse Test 2. T C = 25℃ V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 30V V DS = 48V Note : I ※ D = 30.0 A Q g, Total Gate Charge [nC] 0 20 40 60 80 100 120 140 0 20 40 60 80 100 V GS = 20V V GS = 10V Note : T ※ J = 25℃ I D, Drain Current [A] 3/7 Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics SFD30N06 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 0 5 10 15 20 25 30 35 0 500 1000 1500 2000 C rss C oss C iss Notes : ※ 1. V GS = 0V 2. f=1MHz C iss=Cgs+Cgd(Cds=shorted) C oss=Cds+Cgd C rss=Cgd V DS, Drain-Source Voltage [V] |
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