0.40.6

0.81.0

1.21.4

1.6

10

0

10

1

150℃

Notes :

※

1. V

2. 250µ s Pulse Test

25℃

V

2

468

10

10

0

10

1

150

25

-55

Notes :

※

1. V

2. 250µ s Pulse Test

V

10

-1

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom :

5.0 V

Notes :

※

1. 250µ s Pulse Test

2. T

V

0

5

10

15

20

25

30

0

2

4

6

8

10

12

V

V

Note : I

※

Q

0

20

40

60

80

100

120

140

0

20

40

60

80

100

V

V

Note : T

※

I

3/7

Fig 3. On Resistance Variation vs.

Drain Current and Gate Voltage

Fig 4. On State Current vs.

Allowable Case Temperature

Fig 5. Capacitance Characteristics

Fig 6. Gate Charge Characteristics

SFD30N06

Fig 1. On-State Characteristics

Fig 2. Transfer Characteristics

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

0

5

10

15

20

25

30

35

0

500

1000

1500

2000

C

rss

C

oss

C

iss

Notes :

※

1. V

2. f=1MHz

C

C

C

V