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RMLD232UAW Datasheet(PDF) 11 Page - Emerging Memory & Logic Solutions Inc |
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RMLD232UAW Datasheet(HTML) 11 Page - Emerging Memory & Logic Solutions Inc |
11 / 50 page 11 Rev 0.7 64Mb Low Power DDR SDRAM Advanced Row Active The Bank Activation cimmand is issued by holding CAS and WE high with CS and RAS low at the rising edge of the clock(CK). The DDR SDRAM has four independent banks, so two Bank Select addresses(BA0, BA1) are required. The Bank Activation command must be applied before any Read or Write operation is executed. The delay from the Bank Activation command to the first read or write command must meet or exceed the minimum of RAS to CAS delay time(tRCD min). Once a bank has been activated, it must be precharged before another Bank Activation command can be applied to the same bank. The minimum time interval between inter- leaved Bank Activation comands(Bank A to Bank B and vice versa) is the Bank to Bank delay time(tRRD min). Read Bank This command is used after the row activate command to initiate the burst read of data. The read command is initiated by activating CS, CAS, and deassertig WE, RAS at the same clock sampling(rising) edge as described in the command truth table. The length of the burst and the CAS latency time will be determined by the values programmed during the MRS cycle. Write Bank This command is used after the row activate command to initiate the burst write of data. The write command is initiated by activating RAS, CS, WE, and deassertig RAS at the same clock sampling(rising) edge as described in the command truth table. The length of the burst will be determined by the values programmed during the MRS cycle. Bank Activation Command Cycle 0 1 2 3 4 5 Tn Tn+1 CK CK Address Command Bank A Row Addr. RAS-CAS delay(tRCD) Bank A Col. Addr. NOP NOP NOP Write A Bank B Bank A Activate with Auto Bank B Activate Row Addr. Bank A Row Addr. Bank A Activate NOP ROW Cycle Time(tRC) RAS-RAS delay time(tRRD) : Don’t Care Figure.4 Bank activation command cycle timing Precharge |
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