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EM7162SP16AW-55S Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc

Part # EM7162SP16AW-55S
Description  1M x 16Bit Multiplexed Single Transistor RAM
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM7162SP16AW-55S Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc

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EM7162SP16AW Series
1Mx16 Multiplexed STRAM
4
DC AND OPERATING CHARACTERISTICS
1. Maximum Icc specifications are tested with VCC = VCCmax.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL ,
VIO=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA,
CS<0.2V, VIN<0.2V or VIN>VCCQ-0.2V
-
-
3
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, VIN=VIL or VIH
-
-
25
mA
Output low voltage
VOL
IOL = 0.1mA, VCC=VCCmin
-
-
0.1
V
Output high voltage
VOH
IOH = -0.1mA, VCC=VCCmin
VCCQ-0.1
-
-
V
Standby Current (CMOS)
ISB1
CS>VCCQ-0.2V, Other inputs = 0 ~ VCCQ
(Typ. condition : VCC=1.8V @ 25oC)
(Max. condition : VCC=1.9V @ 85oC)
LL
-
-
60
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -25 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.7
1.8
1.9
V
VCCQ
1.7
1.8
1.9
V
Ground
VSS, VSSQ
0
0
0
V
Input high voltage
VIH
VCCQ - 0.4
-
VCCQ + 0.22)
V
Input low voltage
VIL
-0.23)
-
0.4
V
CAPACITANCE1) (f =1MHz, TA=25oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF


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