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STGB8NC60KD Datasheet(PDF) 5 Page - STMicroelectronics |
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STGB8NC60KD Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD Electrical characteristics 5/18 Symbol Parameter Test conditions Min. Typ. Max. Unit tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390 V, IC = 3 A, RGE = 10 Ω, VGE =15 V (see Figure 21) 33 72 82 ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time Vcc = 390 V, IC = 3 A, RGE=10 Ω, VGE =15 V, TC = 125 °C (see Figure 21) 60 106 136 ns ns ns Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets 1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 3 A RG= 10 Ω, VGE=15 V (see Figure 21) 55 85 140 µJ µJ µJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCC = 390 V, IC = 3 A RG= 10 Ω, VGE= 15 V, TC = 125 °C (see Figure 21) 87 162 249 µJ µJ µJ Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 3 A IF = 3 A, TC = 125 °C 1.6 1.3 2.1 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A, VR = 30 V, di/dt = 100 A/ µs (see Figure 22) 23.5 16.5 1.4 ns nC A trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 3 A,VR = 30 V, TC =125 °C, di/dt = 100 A/µs (see Figure 22) 39 39 2 ns nC A Table 6. Switching on/off (inductive load) (continued) |
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