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ADS62P43IRGCR Datasheet(PDF) 5 Page - Texas Instruments |
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ADS62P43IRGCR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 70 page www.ti.com ELECTRICAL CHARACTERISTICS ADS62P45, ADS62P44 ADS62P43, ADS62P42 SLAS561A – JULY 2007 – REVISED FEBRUARY 2008 Typical values are at 25 °C, AVDD = 3.3 V, DRVDD = 1.8 v to 3.3 V, maximum rated sampling frequency, 50% clock duty cycle, –1 dBFS differential analog input, internal reference mode, applies to CMOS and LVDS interfaces, unless otherwise noted. Min and max values are across the full temperature range TMIN = –40°C to TMAX = 85°C, AVDD = 3.3 V, DRVDD = 3.3 V, unless otherwise noted. ADS62P45 ADS62P44 ADS62P43 ADS62P42 FS = 125 MSPS FS = 105 MSPS FS = 80 MSPS FS = 65 MSPS PARAMETER UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX RESOLUTION 14 14 14 14 Bits ANALOG INPUT Differential input voltage range 2 2 2 2 VPP Differential input resistance (dc) > 1 > 1 > 1 > 1 M Ω see Figure 82 Differential input capacitance 7 7 7 7 pF see Figure 83 Analog input bandwidth 450 450 450 450 MHz Analog input common mode current (per µA/MSP 1.3 1.3 1.3 1.3 input pin of each ADC) S REFERENCE VOLTAGES VREFB Internal reference bottom voltage 1 1 1 1 V VREFT Internal reference top voltage 2 2 2 2 V VCM Common mode output voltage 1.5 1.5 1.5 1.5 V VCM output current capability 4 4 4 4 mA DC ACCURACY No missing codes Specified Specified Specified Specified EO Offset error -10 ± 2 10 -10 ± 2 10 -10 ± 2 10 -10 ± 2 10 mV Offset error temperature coefficient 0.05 0.05 0.05 0.05 mV/ °C There are two sources of gain error – internal reference inaccuracy and channel gain error EGREF Gain error due to internal reference -2 0.25 2 -2 0.25 2 -2 0.25 2 -2 0.25 2 % FS inaccuracy alone EGCHAN Gain error of channel alone(1) across devices & across channels within a -1 ±0.3 1 -1 ±0.3 1 -1 ±0.3 1 -1 ±0.3 1 % FS device. 0.00 Channel gain error temperature coefficient 0.005 0.005 0.005 Δ%/ °C 5 - ± - DNL Differential nonlinearity -0.95 ± 0.6 -0.95 ± 0.6 ± 0.5 LSB 0.95 0.5 0.95 INL Integral nonlinearity -5 ± 2.5 5 -5 ± 2.5 5 -5 ± 2 5 -5 ± 2 5 LSB POWER SUPPLY IAVDD Analog supply current 240 275 215 240 180 200 156 175 mA No external load Digital supply current, 17 14 12 10 mA capacitance CMOS interface IDRVDD DRVDD = 1.8 V 10-pF external 30 26 22 19 mA Fin = 2 MHz (2) load capacitance Digital supply current, LVDS interface IDRVDD 73 73 73 73 mA with 100- Ω external termination PAVDD Analog power dissipation 799 908 710 792 594 660 515 578 mW No external load 31 25 22 18 mW Digital power dissipation, capacitance PDRVDD CMOS interface 10-pF external DRVDD = 1.8 V (3) 54 47 40 34 mW load capacitance Global powerdown 50 75 50 75 50 75 50 75 mW (1) This is specified by design and characterization; it is not tested in production. (2) In CMOS mode, the DRVDD current scales with the sampling frequency, the load capacitance on output pins, input frequency and the supply voltage (see Figure 79 and CMOS power dissipation in application section). (3) The maximum DRVDD current depends on the actual load capacitance on the digital output lines. Note that the maximum recommended load capacitance on each digital output line is 10 pF. Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): ADS62P45, ADS62P44 ADS62P43, ADS62P42 |
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