Electronic Components Datasheet Search |
|
STD1NB80-1 Datasheet(PDF) 3 Page - STMicroelectronics |
|
STD1NB80-1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 400 V ID = 0.5A RG = 4.7 Ω VGS = 10 V 8 10 12 14 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V ID =1.1 A VGS = 10 V 10 5 4 14 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 640 V ID = 1.1 A RG = 4.7 Ω VGS = 10 V 40 15 50 56 21 70 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 1 4 A A VSD ( ∗) Forward On Voltage ISD = 1 A VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.1 A di/dt = 100 A/ µs VDD = 100 V Tj = 150 o C 460 1150 5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STD1NB80-1 3/5 |
Similar Part No. - STD1NB80-1 |
|
Similar Description - STD1NB80-1 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |