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STD20N06 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD20N06
Description  N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD20N06 Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =30 V
ID =10 A
RG =50
Ω
VGS =10 V
(see test circuit, figure 3)
45
280
65
380
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =48 V
ID =20 A
RG =50
Ω
VGS =10 V
(see test circuit, figure 5)
240
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =20 A
VGS =10 V
60
10
20
80
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =48 V
ID =20 A
RG =50
Ω VGS =10 V
(see test circuit, figure 5)
55
125
200
75
170
270
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
20
80
A
A
VSD (
∗)
Forward On Volt age
ISD =20 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 20 A
di/dt = 100 A/
µs
VDD =30 V
Tj =150
oC
(see test circuit, figure 5)
80
0.3
7
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD20N06
3/10


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