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STD20NF10 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD20NF10 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 October 2002 . STD20NF10 N-CHANNEL 100V - 0.038 Ω - 25A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.038 Ω s EXCEPTIONAL dv/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL TYPE VDSS RDS(on) ID STD20NF10 100 V <0.045 Ω 25 A(*) 3 2 1 1 3 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (*) Current Limited by Package (1) ISD ≤25A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 10 A, VDD = 27V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID(*) Drain Current (continuous) at TC = 25°C 25 A ID Drain Current (continuous) at TC = 100°C 21 A IDM(•) Drain Current (pulsed) 100 A Ptot Total Dissipation at TC = 25°C 85 W Derating Factor 0.57 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 300 mJ Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
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