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STD2NA60 Datasheet(PDF) 2 Page - STMicroelectronics |
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STD2NA60 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  THERMAL DATA Rthj-case Rthj-amb Rthj-amb Tl Thermal Resist ance Junct ion-case Max Thermal Resist ance Junct ion-ambient Max Thermal Resist ance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.5 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Uni t IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 2.3 A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, ID =IAR,VDD =50 V) 26 mJ EAR Repet itive Avalanche Energy (pulse width limited by Tj max, δ <1%) 1mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 oC, pulse width limited by Tj max, δ <1%) 1.4 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS = 0 600 V IDSS Zero Gate Volt age Drain Current (VGS =0) VDS =Max Rating VDS = Max Rating x 0.8 Tc =125 oC 25 250 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30 V ± 100 nA ON ( ∗) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA 2. 25 3 3. 75 V RDS(on) St atic Drain-source On Resist ance VGS =10V ID = 1.5 A 3.3 4 Ω ID(on) On St ate Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 2.3 A DYNAMIC Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(on) xRD S(on)max ID =1.5 A 1 2 S Ciss Coss Crss I nput Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS =0 380 57 17 500 75 23 pF pF pF STD2NA60 2/10 |
Similar Part No. - STD2NA60 |
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Similar Description - STD2NA60 |
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