STD616A datasheet(2/5 Pages) STMICROELECTRONICS

Part #	STD616A

Description	HIGH VOLTAGE NPN POWER TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

6.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0 V)

VCE = 1000 V

Tj =125

oC

50

0.5

µA

mA

VCEO(sus)

Collector-Emit ter

Sustaining Voltage

IC = 100 mA

L = 25 mH

450

V

VBEO

Collector-Base

Sustaining Voltage

IC =1 mA

12

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =250 mA

IB =65 mA

IC =0.8 A

IB =250 mA

0.3

0.5

V

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =250 mA

IB =65 mA

IC =0.8 A

IB =250 mA

1.0

1.2

V

hFE

∗

DC Current Gain

IC =200

µAVCE =5 V

IC =300 mA

VCE =5 V

IC =480 mA

VCE =5 V

IC =1. 6 A

VCE =5 V

17

25

12

4

ton

ts

tf

RESI STIVE LO AD

Turn O n Time

St orage Time

Fall Time

VCC = 250 V

IC =250 mA

IB1 =65 mA

IB2 =-130 mA

0.2

5

0.65

µs

ton

ts

tf

RESI STIVE LO AD

Turn O n Time

St orage Time

Fall Time

VCC = 250 V

IC =0.8 A

IB1 =160 mA

IB2 =-0.4 A

1

2.5

0.35

µs

ts

tf

INDUCTIVE LO AD

St orage Time

Fall Time

Vcl =300 V

IC =250 mA

IB1 =65 mA

IB2 =-130 mA

L= 200

µH

5

0.5

µs

ts

tf

INDUCTIVE LO AD

Turn O n Time

St orage Time

Fall Time

Vcl =300 V

IC = 0.8 A

IB1 =160 mA

IB2=-0.4 A

L= 200

µH

2.5

0.25

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

STD616A-1

2/5

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