BQ24108RHLR datasheet(6/29 Pages) TI

Part #	BQ24108RHLR

Description	SYNCHRONOUS SWITCHMODE, LI-ION AND LI-POL CHARGE MANAGEMENT IC WITH INTEGRATED POWERFETS (bqSWITCHER)

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Manufacturer	TI [Texas Instruments]

Direct Link	http://www.ti.com

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6 / 29 page

bq24100, bq24103, bq24105

bq24108, bq24113, bq24115

SLUS606B − JUNE 2004 − REVISED NOVEMBER 2004

6

www.ti.com

ELECTRICAL CHARACTERISTICS (continued)

TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated)

PARAMETER

UNIT

MAX

TYP

MIN

TEST CONDITIONS

TTC INPUT

tPRECHG

Precharge timer

1440

1800

2160

s

tCHARGE

Programmable charge timer range

t(CHG) = C(TTC) × K(TTC)

25

572

minutes

Charge timer accuracy

0.01 µF ≤ C(TTC) ≤ 0.18 µF

−10%

10%

KTTC

Timer multiplier

2.6

min/nF

CTTC

Charge time capacitor range

0.01

0.22

µF

VTTC_EN

TTC enable threshold voltage

V(TTC) rising

200

mV

SLEEP COMPARATOR

V

Sleep mode entry threshold

2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells

VCC ≤

VIBAT

+5 mV

VCC ≤

VIBAT

+75mV

V

VSLP−ENT

Sleep-mode entry threshold

VI(OUT) = 12.6 V,

RIN = 1 kΩ (1)

bq24105/15

VCC ≤

VIBAT

−4 mV

VCC ≤

VIBAT

+73mV

V

VSLP−EXIT

Sleep-mode exit hysteresis,

2.3 V ≤ VI(OUT) ≤ VOREG

40

160

mV

VCC decreasing below threshold,

tFALL = 100 ns, 10-mV overdrive, PMOS turns off

5

µs

tdg-SLP

Deglitch time for sleep mode

VCC decreasing below threshold,

tFALL = 100 ns, 10-mV overdrive, STATx pins

turn off

20

30

40

ms

UVLO

VUVLO−ON

IC active threshold voltage

VCC rising

3.15

3.30

3.50

V

IC active hysteresis

VCC falling

120

150

mV

PWM

Internal P-channel MOSFET

7 V ≤ VCC ≤ VCC(max)

400

Internal P channel MOSFET

on-resistance

4.5 V ≤ VCC ≤ 7 V

500

mΩ

Internal N-channel MOSFET

7 V ≤ VCC ≤ VCC(max)

130

mΩ

Internal N channel MOSFET

on-resistance

4.5 V ≤ VCC ≤ 7 V

150

fOSC

Oscillator frequency

1.1

MHz

Frequency accuracy

−9%

9%

DMAX

Maximum duty cycle

100%

DMIN

Minimum duty cycle

0%

tTOD

Switching delay time (turn on)

20

ns

tsyncmin

Minimum synchronous FET on time

60

ns

Synchronous FET minimum

current-off threshold (2)

50

400

mA

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