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STGP12NB60HD Datasheet(PDF) 2 Page - STMicroelectronics |
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STGP12NB60HD Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page  STGP12NB60HD 2/9 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC SWITCHING ON Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V ICES Collector cut-off (VGE =0) VCE = Max Rating, TC =25 °C 10 µA VCE = Max Rating, TC =125 °C 100 µA IGES Gate-Emitter Leakage Current (VCE =0) VGE = ± 20V , VCE = 0 ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE =VGE,IC =250 µA 35 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC =12 A 2.0 2.8 V VGE =15V,IC =12A, Tj =125°C 1.7 V Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =15V , IC =12 A 10 S Cies Input Capacitance VCE =25V,f= 1MHz,VGE =0 920 pF Coes Output Capacitance 120 pF Cres Reverse Transfer Capacitance 27 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC =12A, VGE = 15V 68 10 30 nC nC nC ICL Latching Current Vclamp = 480 V , Tj = 150°C RG =10 Ω 48 A Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VCC = 480 V, IC =12 A RG =10Ω ,VGE =15 V 5 46 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC =12A RG=10Ω, VGE =15 V, Tj =125°C 800 290 A/µs µJ |
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