Electronic Components Datasheet Search |
|
HC6856YQHZC60 Datasheet(PDF) 3 Page - Honeywell Solid State Electronics Center |
|
HC6856YQHZC60 Datasheet(HTML) 3 Page - Honeywell Solid State Electronics Center |
3 / 12 page HC6856 3 Pulse width ≤1 µs Total Dose ≥1x106 rad(SiO 2) Transient Dose Rate Upset (3) ≥1x109 rad(Si)/s Transient Dose Rate Survivability ≥1x1012 rad(Si)/s Soft Error Rate: Level A <1x10-9 (4) Level Z <1x10-10 Neutron Fluence ≥1x1014 N/cm2 TA=25 °C Parameter Limits (2) Pulse width ≤50 ns, X-ray, VDD=6.6 V, TA=25 °C (1) Device will not latch up due to any of the specified radiation exposure conditions. (2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55 °C to 125°C. (3) Suggested stiffening capacitance specifications for optimum expected dose rate upset performance is stated above in the text. (4) SER <1x10-10 u/b-d from -55 to 80 °C. Adams 10% worst case environment Test Conditions RADIATION HARDNESS RATINGS (1) Total Ionizing Radiation Dose The RAM will meet all stated functional and electrical speci- fications over the entire operating temperature range after the specified total ionizing radiation dose. All electrical and timing performance parameters will remain within specifica- tions after rebound at VDD = 5.5 V and T =125 °C extrapo- lated to ten years of operation. Total dose hardness is assured by wafer level testing of process monitor transistors and RAM product using 10 keV X-ray radiation. Transistor gate threshold shift correlations have been made between 10 keV X-rays applied at a dose rate of 1x105 rad(SiO 2)/min at T = 25 °C and gamma rays (Cobalt 60 source) to ensure that wafer level X-ray testing is consistent with standard military radiation test environments. Transient Pulse Ionizing Radiation The RAM is capable of writing, reading, and retaining stored data during and after exposure to a transient ionizing radiation pulse of ≤1 µs duration up to 1x109 rad(Si)/s, when applied under recommended operating conditions. To en- sure validity of all specified performance parameters be- fore, during, and after radiation (timing degradation during transient pulse radiation is ≤10%), it is suggested that a minimum of 0.8 µF per part of stiffening capacitance be placed between the package (chip) VDD and VSS, with a maximum inductance between the package (chip) and stiffening capacitance of 0.7 nH per part. If there are no operate-through or valid stored data requirements, the capacitance specification can be reduced to a minimum of 0.1 µF per part. The RAM will meet any functional or electrical specification after exposure to a radiation pulse of ≤ 50 ns duration up to 1x1012 rad(Si)/s, when applied under recommended oper- ating conditions. Note that the current conducted during the pulse by the RAM inputs, outputs, and power supply may significantly exceed the normal operating levels. The appli- cation design must accommodate these effects. Neutron Radiation The RAM will meet any functional or timing specification after a total neutron fluence of up to 1x1014 cm-2 applied under recommended operating or storage conditions. This assumes an equivalent neutron energy of 1 MeV. Soft Error Rate The RAM is capable of soft error rate (SER) performance of <1x10-10 upsets/bit-day, under recommended operating conditions. This hardness level is defined by the Adams 10% worst case cosmic ray environment. Latchup The RAM will not latch up due to any of the above radiation exposure conditions when applied under recommended operating conditions. Fabrication with the RICMOS™ p-epi on p+ substrate process and use of proven design tech- niques, such as double guardbanding, ensure latchup immunity. 1 MeV equivalent energy, Unbiased, TA=25 °C Units upsets/bit-day RADIATION CHARACTERISTICS |
Similar Part No. - HC6856YQHZC60 |
|
Similar Description - HC6856YQHZC60 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |