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STK12N06L Datasheet(PDF) 3 Page - STMicroelectronics

Part # STK12N06L
Description  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STK12N06L Datasheet(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =25 V
ID =6 A
RG =50
Ω
VGS =5 V
(see test circuit, figure 3)
55
180
80
260
ns
ns
(di/dt) on
Turn-on Current Slope
VDD =40 V
ID =12 A
RG =50
Ω
VGS =5 V
(see test circuit, figure 5)
120
A/
µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =40 V
ID =12 A
VGS =5 V
12
6
4
18
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =40 V
ID =12 A
RG =50
Ω VGS =5 V
(see test circuit, figure 5)
40
60
110
60
90
160
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
12
48
A
A
VSD (
∗)
Forward On Volt age
ISD =12 A
VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 12 A
di/dt = 100 A/
µs
VDD =25 V
Tj =150
oC
(see test circuit, figure 5)
75
0.15
4
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Areas
Thermal Impedance
STK12N05L/STK12N06L
3/10


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