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STG3159DTR Datasheet(PDF) 1 Page - STMicroelectronics |
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STG3159DTR Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page December 2006 Rev 1 1/18 18 Features ■ High speed: –tPD = 1.5ns (Typ.) at VCC = 3.0V –tPD = 1.5ns (Typ.) at VCC = 2.3V ■ Ultra low power dissipation: –ICC = 0.2µA (Max.) at TA = 85°C ■ Low "ON" resistance: –RON = 1.0Ω (TA = 25ºC) at VCC = 4.3V –RON = 1.1Ω (TA = 25ºC) at VCC = 3.0V –RON = 1.7Ω (TA = 25ºC) at VCC = 1.8V ■ Wide operating voltage range: –VCC (OPR) = 1.65V to 4.5V single supply ■ 4.5V Tolerant and 1.8V compatible threshold on digital control input at VCC = 2.3V to 3.0V ■ Latch-up performance exceeds 100mA per JESD 78, Class II ■ ESD Performance tested per JESD22 – 2000V Human-body model (A114-B, Class II) – 200V Machine model (A115-A) – 1000V Charged-device model (C101) Description The STG3159 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications. The device offers very low ON-Resistance (1 Ω) at VCC = 4.3V. The SEL inputs are provided to control the switch. The switch S1 is ON (they are connected to common Ports Dn) when the SEL input is held high and OFF (high impedance state exists between the two ports) when SEL is held low; the switch S2 is ON (it is connected to common Port D) when the SEL input is held low and OFF (high impedance state exists between the two ports) when SEL is held high. Additional key features are fast switching speed, break-before-make delay time and Ultra Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. DFN6L STG3159 Low voltage 1 Ω max single SPDT switch with break-before-make feature www.st.com Order codes Part number Package Packaging STG3159DTR DFN6L (1.2mm x 1mm) Tape and Reel |
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