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74V1G07STR Datasheet(PDF) 1 Page - STMicroelectronics |
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74V1G07STR Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  1/9 April 2004 s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC =5V s LOW POWER DISSIPATION: ICC =1µA(MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH =VNIL = 28% VCC (MIN.) s POWER DOWN PROTECTION ON INPUT s OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V s IMPROVED LATCH-UP IMMUNITY DESCRIPTION The 74V1G07 is an advanced high-speed CMOS SINGLE BUFFER (OPEN DRAIN) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on input and 0 to 7V can be accepted on input with no regard to the supply voltage. This device can be used to interface5V to3V. 74V1G07 SINGLE BUFFER (OPEN DRAIN) PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES PACKAGE T & R SOT23-5L 74V1G07STR SOT323-5L 74V1G07CTR SOT323-5L SOT23-5L |
Similar Part No. - 74V1G07STR |
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Similar Description - 74V1G07STR |
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