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THBT20011 Datasheet(PDF) 4 Page - STMicroelectronics |
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THBT20011 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 10 page Characteristics THBT15011, THBT20011, THBT27011 4/10 Figure 4. Test circuit 1 for IBO and VBO parameters Table 5. Dynamic breakover voltages (transversal mode) Type Symbol Test conditions(1) Max Unit THBT15011D VBO 10/700 μs 1.2/50 μs 2/10 μs 1.5kV 1.5kV 2.5kV Rp=10 Ω Rp=10 Ω Rp=62 Ω IPP=30A IPP=30A IPP=38A 190 190 200 V THBT20011D VBO 10/700 μs 1.2/50 μs 2/10 μs 1.5kV 1.5kV 2.5kV Rp=10 Ω Rp=10 Ω Rp=62 Ω IPP=30A IPP=30A IPP=38A 270 270 280 V THBT27011D VBO 10/700 μs 1.2/50 μs 2/10 μs 1.5kV 1.5kV 2.5kV Rp=10 Ω Rp=10 Ω Rp=62 Ω IPP=30A IPP=30A IPP=38A 360 360 400 V 1. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card. 220V 50Hz 1/4 R1 = 140 Ω R2 = 240 Ω K ton = 20ms IBO measurement VBO measurement Vout DUT TEST PROCEDURE Pulse test duration (tp = 20ms): V selection: ● ● ● ● for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open Device with V < 200 V V = 250 V , R1 = 140 OUT BO OUT RMS ➔ Ω Device with V 200 V V = 480 V , R2 = 240 BO OUT RMS ➔ Ω ≥ |
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