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THBT27011 Datasheet(PDF) 3 Page - STMicroelectronics |
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THBT27011 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page THBT15011, THBT20011, THBT27011 Characteristics 3/10 Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-a) Junction to ambient 170 °C/W Table 3. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage IRM Leakage current at stand-off voltage VR Continuous reverse voltage VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current VF Forward voltage drop IPP Peak pulse current C Capacitance V I I H IBO V RM VBR BO V PP I R I Table 4. Static parameters Type IRM @ VRM IR @ VR VBO @ IBO IH C max. max. max. min. min. max. (1) (2) (3) (4) µA V µA V V V mA mA pF THBT15011D 5 135 50 150 210 50 400 150 80 THBT20011D 5 180 50 200 290 50 400 150 80 THBT27011D 5 240 50 270 380 50 400 150 80 1. IR measured at VR guarantee VBR min ≥ VR 2. Measured at 50 Hz (1 cycle) - See test circuit 1 (Figure 4). 3. See the reference test circuit 2 (Figure 5). 4. VR = 1 V bias, VRMS = 1 V, F = 1 MHz. |
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