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STP12NB30FP Datasheet(PDF) 3 Page - STMicroelectronics |
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STP12NB30FP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =150 V ID =6 A RG =4.7 Ω VGS =10 V 20 10 28 14 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =240 V ID =12A VGS =10 V 29 11 12 40 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =240 V ID =12 A RG =4.7 Ω VGS =10 V 10 10 20 14 14 28 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 12 48 A A VSD ( ∗) Forward On Voltage ISD =12 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A di/dt = 100 A/ µs VDD =100 V Tj =150 oC 250 2 16 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP12NB30/FP 3/6 |
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