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STP16N10L Datasheet(PDF) 3 Page - STMicroelectronics |
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STP16N10L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = 50 V ID = 8 A RG = 4.7 Ω VGS = 5 V 15 40 20 55 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 80 V ID = 16 A VGS = 5 V 20 6 10 30 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 80 V ID = 16 A RG = 4.7 Ω VGS = 5 V 12 12 25 18 18 35 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD ( ∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A di/dt = 100 A/ µs VDD = 30 V Tj = 150 oC 145 580 8 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP16N10L 3/5 |
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Similar Description - STP16N10L |
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