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VN5016AJ-E Datasheet(PDF) 23 Page - STMicroelectronics |
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VN5016AJ-E Datasheet(HTML) 23 Page - STMicroelectronics |
23 / 32 page VN5016AJ-E Application Information 23/32 If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize Solution 2 (see below). 3.1.2 Solution 2 : diode (DGND) in the ground line A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift ( ≈ 600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. 3.2 Load dump protection Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the VCC max DC rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown in the ISO 7637-2: 2004(E) table. 3.3 MCU I/Os protection If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak/Ilatchup ≤Rprot ≤(VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V 5k Ω ≤Rprot ≤180kΩ. Recommended values: Rprot =10kΩ, CEXT=10nF. |
Similar Part No. - VN5016AJ-E_08 |
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Similar Description - VN5016AJ-E_08 |
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