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STP32N06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP32N06
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP32N06 Datasheet(HTML) 1 Page - STMicroelectronics

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STP32N06L
STP32N06LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.045
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
LOGIC LEVEL COMPATIBLE INPUT
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
VDSS
R DS(on)
ID
STP32N06L
STP32N06LFI
60 V
60 V
< 0.055
Ω
< 0.055
Ω
32 A
19 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP32N06L
STP32N06LFI
VDS
Drain-source Voltage (VGS =0)
60
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)60
V
VGS
Gate-source Voltage
± 15
V
ID
Drain Current (cont inuous) at T c =25
oC32
19
A
ID
Drain Current (cont inuous) at T c =100
oC22
13
A
IDM(
•)
Drain Current (pulsed)
128
128
A
Ptot
Total Dissipation at Tc =25
oC
105
40
W
Derating Factor
0.7
0.27
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 175
oC
Tj
Max. Operat ing Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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